Spray Technology
Hybrid Etching・Two-Fuid Developing
Two-Fluid Developing Equipment (patented)
SEM and cross-sectional photographs using two-fluid development processing(L/S=2/2)
Hybrid Etching Equipment (patented)
Line/space/Cu thickness = 20μm/20μm/12μm
Cross-section of the peripheral area of the substrate
| Average | Top side | Bottom side |
|---|---|---|
| Thickness | 12.5μm | 12.4μm |
| Top | 17.3μm | 16.0μm |
| Bottom | 20.2μm | 19.6μm |
| E.F | 8.6 | 6.9 |
Cross-section of the central area of the substrate
| Average | Top side | Bottom side |
|---|---|---|
| Thickness | 11.2μm | 12.4μm |
| Top | 14.7μm | 15.5μm |
| Bottom | 19.0μm | 19.7μm |
| E.F | 5.2 | 7.8 |
Line/space/Cu thickness = 30μm/30μm/18μm
Cross-section of the peripheral area of the substrate
| Average | Top side | Bottom side |
|---|---|---|
| Thickness | 18.4μm | 17.7μm |
| Top | 24.6μm | 22.3μm |
| Bottom | 27.6μm | 24.6μm |
| E.F | 12.3 | 15.4 |
Cross-section of the central area of the substrate
| Average | Top side | Bottom side |
|---|---|---|
| Thickness | 18.6μm | 17.3μm |
| Top | 20.0μm | 21.0μm |
| Bottom | 22.7μm | 24.4μm |
| E.F | 13.8 | 10.2 |